We explore the performance improvement of ultra-scaled phase-change memory (PCM) device with graphene- Ge2Sb2Te5 (GST) heterostructure by means of first-principle simulations of electron transport. We compare the tunneling probability of single-barrier(SB) and double barrier(DB) heterostructures and show that the use of DB can have a significant impact on the ON/OFF conductance ratio ... https://mabelandfoxs.shop/product-category/dressing-gown/